“Compared to the 8GB memory modules used in today’s servers, our new module packs an eco-sensitive wallop with four times the density at significantly reduced power levels and no increase in the overall footprint,” said Jim Elliott, vice president, memory marketing, Samsung Semiconductor, Inc. “For data centers, it’s a powerhouse in energy efficiency and performance,” he added.
According to Samsung, the new 32GB memory module has been designed using the company's 50nm-class 4GB DDR3, providing costumers with an operating voltage of 1.35V, which improves throughput by 20 percent over a 1.5V DDR3. In addition, according to Samsung, the new memory module delivers new levels of energy efficiency, making them suitable for some of the more energy-efficient “green” systems.
The new 32GB registered inline memory module (RDIMM) has been developed using seventy-four 4GB DDR3 chip dies, with the help of the aforementioned Samsung 50nm-class DRAM production technology. This makes up for the nine quad-die package (QDP) 16GB DDR3s mounted on each side of the PCB (printed circuit board), for a total of 32GB.
Samsung's latest release confirms an ongoing market trend for the adoption of the DDR3 DRAM, which is expected to account for 29 percent of the total DRAM market this year, 75 percent by 2011, according to recent estimations from IDC.
source: softpedia.com
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